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[48] Formation of semiconducting ZnO nanowires using dip-pen nanolithography and step edge decoration approach
Electrochemical and Solid-State Letters
14 (10), H397-H399 (2011)
2011-07-12
Jong Yeog Son
Young-Han Shin, Yun-Sok Shin
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[47] HfO
2
thin film resistive switch using conducting atomic force microscopy
Electrochemical and Solid-State Letters
, (2011)
2011-05-06
Jong Yeog Son
Young-Han Shin, Yun-Sok Shin
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[46] High mobility graphene nanoribbons prepared using polystyrene dip-pen nanolithography
Journal of the American Chemical Society
133 (15), 5623-5625 (2011)
2011-03-28
Yun-Sok Shin
Jong Yeog Son, Young-Han Shin
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[45] Fabrication of ultra-thin Nb nanopin arrays
Electrochemical and Solid-State Letters
14 (3), D33-D35 (2011)
2011-01-04
Jong Yeog Son
Young-Han Shin, Yun-Sok Shin
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[44] Fast domain wall switching in a thin ferroelectric polymer layer
Electrochemical and Solid-State Letters
14 (1), G1-G3 (2010)
2010-11-05
Jong Yeog Son
Hyun Myung Jang, Young-Han Shin
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[43] A nonvolatile memory device made of a ferroelectric polymer gate nanodot and a single-walled carbon nanotube
ACS Nano
4 (12), 7315-7320 (2010)
2010-11-05
Jong Yeog Son
Hyun Myung Jang, Young-Han Shin
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[42] Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors films during the resistive switching
ACS Nano
4 (6), 3288-3292 (2010)
2010-06-22
Jong Yeog Son
Hyun Myung Jang, Young-Han Shin
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[41] NiO RRAM nano-capacitor array on graphene
ACS Nano
4 (5), 2655-2658 (2010)
2010-05-25
Jong Yeog Son
Young-Han Shin
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[40] Kelvin probe force microscopy for conducting nanobits of NiO thin films
Nanotechnology
21 (32), 215704 (2010)
2010-04-30
Jong Yeog Son
Young-Han Shin
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