[48] Formation of semiconducting ZnO nanowires using dip-pen nanolithography and step edge decoration approach

We demonstrate the fabrication of a semiconducting (SC) ZnO nanowire (NW) using a dip-pen nanolithography (DPN) incorporated with a "step edge decoration" technique, where a Zn(CH₃COO)₂-2H₂O-2-methoxyethanol solution is used to form the ZnO NW. Notably, the SC ZnO NW is position controllable to a precision of several nanometers. The semicircular ZnO NW with a diameter of 30 nm exhibits n-type field effect transistor behavior.