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- First authors: Jong Yeog Son
- Corresponding authors: Young-Han Shin, Yun-Sok Shin
- Whole authors: Jong Yeog Son, D.-Y. Kim, H. Kim, W. J. Maeng, Yun-Sok Shin, Young-Han Shin
- Authors from M3L: Young-Han Shin
A HfO2 thin film is incorporated into a resistive random access memory (RRAM) device based on conducting atomic force microscopy (CAFM). The RRAM element consists of an Au nanodot connected to a CAFM tip as an anode, a HfO2 channel, and a Pt electrode as a cathode. A nearly uniform Au nanodot array with a mean Au dot diameter of 25 nm is formed using a DBC nanotemplate and metallization techniques. The nanoscale HfO2 RRAM element exhibits unipolar resistive switching behavior similar to that of a typical RRAM bit.
Authors from M3L