[14] Bistable resistive states of amorphous SrRuO₃ thin films

We fabricated amorphous SrRuO₃ thin films which exhibited the electronic transport behavior of an insulator that showed a three-dimensional hopping transport. Depending on the polarity of a sweep bias, bistable resistive states were observed in the capacitor consisted of an amorphous SrRuO₃ thin film and Pt electrodes, which gives the opportunity for nonvolatile memory applications. From electric transport and optical conductivity data, we indirectly confirmed a probability of the mixed phase of SrO and RuO₂ in the amorphous SrRuO₃ thin film. This supports the applicability of a filament model as a mechanism for the bistable resistive states.