[23] Writing ferroelectric domain bits on the PbZr_0.48Ti_0.52O₃ thin film

PbZr_0.48Ti_0.52O₃ thin films were fabricated on (111) Pt/TiO₂/SiO₂/Si substrate by eclipse pulsed laser deposition with the very low deposition rate of 0.02Å/pulse. High crystalline PbZr_0.48Ti_0.52O₃ thin films showed a good ferroelectric property with the high remanent polarization of 48𝜇C/cm² as well as an enhanced fatigue behavior. The small roughness of PZT thin films makes a negligible influence on electron force microscope images, which gave the enhanced resolution for the observation of a minimum ferroelectric bit size. We demonstrated the minimum ferroelectric bits below 9 nm, which were clearly observed.