[27] Highly c-oriented PbZr0.48Ti0.52O3 thin film on glass substrate

Electrochemical and Solid-State Letters 12 (5), G20-G22 (2009)

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  • First authors: Jong Yeog Son
  • Corresponding authors: Young-Han Shin
  • Whole authors: Jong Yeog Son, Young-Han Shin
  • Authors from M3L: Young-Han Shin
We obtained preferentially (220)-oriented yttria-stabilized zirconia (YSZ) buffer layers on glass substrates by pulsed laser deposition. These preferentially (220)-oriented YSZ buffer layers enabled us to grow preferentially (100)-oriented SrRuO3 bottom electrodes. On the preferentially (100)-oriented SrRuO3 bottom electrodes, we obtained preferentially c-oriented PbZr0.48Ti0.52O3 (PZT) thin films, which were confirmed by an X-ray diffraction experiment. The highly c-oriented PZT thin films exhibited a high ferroelectric polarization of about 32 um/cm2. We also checked a high storage density of about 10 Tbit/in2 with a minimum bit size below 8 nm with the highly c-oriented PZT thin films by electric force microscope.

Authors from M3L

Author from M3L
Young-Han Shin
hoponpop@ulsan.ac.kr