Whole authors:
Jong Yeog Son, Young-Han Shin, Sangwoo Ryu, Hyungjun Kim, Hyun Myung Jang
Authors from M3L:
Young-Han Shin
pen nanolithography of ferroelectric PTO nanodots is described. This position-controlled dip-pen nanolithography using a silicon nitride cantilever produced an array of ferroelectric nanodots with a minimum lateral dimension of ∼37 nm on a Nb-doped SrTiO3 substrate. This minimum-sized PTO dot is characterized by single-domain epitaxial growth with an enhanced tetragonality (c/a ratio) of 1.08.