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- First authors: Sung-Kyu Kim
- Corresponding authors: Jong Yeog Son
- Whole authors: Sung-Kyu Kim, Jong Yeog Son, Young-Han Shin, Moon-Ho Jo, S. Park, Tae Eun Hong, K.J. Yee
- Authors from M3L: Young-Han Shin
Ge<sub>0.7</sub>Mn<sub>0.3</sub> thin films were fabricated on Al<sub>2</sub>O<sub>3</sub> (0001) and glass substrates at growth temperatures ranging from room temperature to 500 °C by a radio frequency magnetron sputtering. We found that the Ge<sub>0.7</sub>Mn<sub>0.3</sub> thin films showed a polycrystalline-to-amorphous transition at about 360 °C, and the ferromagnetic transition temperature of each thin film depends on its structure — crystalline or amorphous states. Particularly, the Ge<sub>0.7</sub>Mn<sub>0.3</sub> thin films showed room temperature ferromagnetism when they were fabricated at temperatures above the crystallization temperature.
Authors from M3L