[42] Self-formed exchange bias of switchable conducting filaments in NiO resistive random access memory capacitors films during the resistive switching

We report on the ferromagnetism of conducting filaments formed in a NiO thin film, which exhibited a typical bistable resistive switching characteristic. The NiO thin film showed an antiferromagnetic hysteresis loop for a high resistive state (ROFF). However, for a low resistive state (RON), the conducting filaments exhibited a ferromagnetic hysteresis loop for the field cooling. The ferromagnetic hysteresis behavior of the RON state reveals switchable exchange coupling between the ferromagnetic Ni conducting filaments and the antiferromagnetic NiO layer.