[44] Fast domain wall switching in a thin ferroelectric polymer layer

Electrochemical and Solid-State Letters 14 (1), G1-G3 (2010)

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  • First authors: Jong Yeog Son
  • Corresponding authors: Hyun Myung Jang, Young-Han Shin
  • Whole authors: Jong Yeog Son, Yun-Sok Shin, Young-Han Shin, Eok Kyun Lee, Hyun Myung Jang
  • Authors from M3L: Young-Han Shin
We investigated the canonical ferroelectric response of a thin ferroelectric polymer film using a piezoelectric force microscopy method. The thin ferroelectric poly(vinyliden fluoride-ran-trifluoroethylene) layer with a thickness of was prepared on a (111) Pt/TiO2/SiO2/Si substrate by a Langmuir–Blodgett method. The flip speed into upward polarization in the thin ferroelectric polymer layer is faster than that into downward polarization because the adhesion strength of the fluorine atoms in the ferroelectric polymer layer with the Pt electrode is stronger than that of the hydrogen atoms.

Authors from M3L

Author from M3L
Young-Han Shin
hoponpop@ulsan.ac.kr