[46] High mobility graphene nanoribbons prepared using polystyrene dip-pen nanolithography

Journal of the American Chemical Society 133 (15), 5623-5625 (2011)

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  • First authors: Yun-Sok Shin
  • Corresponding authors: Jong Yeog Son, Young-Han Shin
  • Whole authors: Yun-Sok Shin, Jong Yeog Son, Moon-Ho Jo, Young-Han Shin, Hyuyn Myung Jang
  • Authors from M3L: Young-Han Shin
Graphene nanoribbons (GNRs) are fabricated by dip-pen nanolithography and polystyrene etching techniques on a SrTiO3/Nb-doped SrTiO3 substrate. A GNR field-effect transistor (FET) shows bipolar FET behavior with a high mobility and low operation voltage at room temperature because of the atomically flat surface and the large dielectric constant of the insulating SrTiO3 layer, respectively.

Authors from M3L

Author from M3L
Young-Han Shin
hoponpop@ulsan.ac.kr