Whole authors:
Yoonho Ahn, Young-Han Shin, Jong Yeog Son
Authors from M3L:
Young-Han Shin
We investigated ferroelectric switching response of poly(vinylidene fluoride-ran-trifluoroethylene) (P(VDF- TrFE)) nanodots with and without nanomolds using piezoelectric force microscopy. Nanomolds with diameter of about 20 and 40 nm were formed on Nb-doped SrTiO3 substrate by nanointaglio process using an atomic force microscopy tip. The P(VDF-TrFE) nanodots were fabri- cated with and without nanomolds on the surface of the Nb-doped SrTiO3 substrate, which was conducted by pre- cisely controllable dip-pen nanolithography. These P(VDF- TrFE) nanodots exhibited good ferroelectric properties with asymmetric behavior in ferroelectric switching response. In particular, the P(VDF-TrFE) nanodots with nanomolds exhibited larger asymmetric switching charac- teristic compared to the P(VDF-TrFE) nanodots without nanomolds, which came from the difference of contact area between the P(VDF-TrFE) nanodots and Nb-doped SrTiO3 substrate (bottom electrode).