[70] Ferroelectric switching response of P(VDF-TrFE) nanodots with and without nanomolds

Applied Physics A 122 (10), 882 (2016)

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  • First authors: Yoonho Ahn
  • Corresponding authors: Jong Yeog Son
  • Whole authors: Yoonho Ahn, Young-Han Shin, Jong Yeog Son
  • Authors from M3L: Young-Han Shin
We investigated ferroelectric switching response of poly(vinylidene fluoride-ran-trifluoroethylene) (P(VDF- TrFE)) nanodots with and without nanomolds using piezoelectric force microscopy. Nanomolds with diameter of about 20 and 40 nm were formed on Nb-doped SrTiO3 substrate by nanointaglio process using an atomic force microscopy tip. The P(VDF-TrFE) nanodots were fabri- cated with and without nanomolds on the surface of the Nb-doped SrTiO3 substrate, which was conducted by pre- cisely controllable dip-pen nanolithography. These P(VDF- TrFE) nanodots exhibited good ferroelectric properties with asymmetric behavior in ferroelectric switching response. In particular, the P(VDF-TrFE) nanodots with nanomolds exhibited larger asymmetric switching charac- teristic compared to the P(VDF-TrFE) nanodots without nanomolds, which came from the difference of contact area between the P(VDF-TrFE) nanodots and Nb-doped SrTiO3 substrate (bottom electrode).

Authors from M3L

Author from M3L
Young-Han Shin
hoponpop@ulsan.ac.kr