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- First authors: Muhammad Sheeraz
- Corresponding authors: Chang Won Ahn, Tae Heon Kim
- Whole authors: Muhammad Sheeraz, Hye Jung Kim, Kyou-Hyun Kim, Jong-Seong Bae, Ah Young Kim, Manil Kang, Jongmin Lee, Jaesun Song, Abdul Khaliq, Jinkwon Kim, Byeong-Gwan Cho, Sung-Yoon Joe, Jong Hoon Jung, Jae-Hyeon Ko, Tae Yeong Koo, Tae Won Noh, Shinuk Cho, Sanghan Lee, Sang Mo Yang, Young-Han Shin, Ill Won Kim, Chang Won Ahn, Tae Heon Kim
- Authors from M3L: Hye Jung Kim, Young-Han Shin
A sulfur element is a promising anion dopant for synthesizing new multifunctional materials and for exploring unusual physical phenomena. However, owing to its volatility, sulfur substitution to oxide materials is challenging, and thus the sulfurization effects on the associated properties have been limitedly studied. Here, a facile method for sulfurization to a perovskite oxide Pb(Zr,Ti)O3 is developed and demonstrated. A thiourea (CH4N2S) solution is used as a precursor for the sulfurization and its doping-level control. By manipulating the sulfur concentration (x), we systematically examine the physical properties of sulfur-doped Pb(Zr,Ti)O3-xSx films. An enhancement in the tetragonality and ferroelectricity by sulfurization is observed with the band-gap reduction, which is consistent with our theoretical predictions. In the sulfurized films, the ferroelectric phonon modes become softened progressively, probably due to the substitution of apical oxygens with sulfur atoms. Our work is of practical interest for designing ferroelectric photovoltaic devices with high performances.
