[109] Electronic Structure and Magnetic Anisotropy Response of Janus Monolayer VSeTe

Herein, the electronic and magnetic properties of the 2D Janus monolayer VSeTe are computed based on first-principles calculations. The structure stability plays a crucial role in real application for magnetic devices; it is found that the VSeTe favors 2H structure due to non-negative frequencies in the phonon spectra. The VSeTe monolayer possesses a semiconductor nature with a bandgap of 1.03 eV (0.85 eV) for spin-up (down) channels. Interestingly, it is shown in the computed results that VSeTe monolayer is a magnetic semiconductor with a magnetic moment of 1.00 . Additionally, the realization of magnetic anisotropy energy can pave the way to utilize VSeTe monolayer for applications in magnetic semiconductor devices.